추천 제품
설명
Absolute Maximum Ratings
Maximum gate-source voltage: ± 50 V
Maximum temperature rating: 150 °C
Maximum drain-source current density: 107 A/cm2
Chip dimensions: 10 mm x 10 mm
Chip thickness: 675 μm
Dirac point: < 50 V
Yield >75%
Encapsulation: 50 nm Al2O3 + 100 nm Si3N4
Gate oxide materials: 90 nm SiO2
Graphene field-effect mobility: >1000 cm2/V·s
Monolayer CVD grown Graphene based 2-probe field effect transistors (FET).
Number of devices per chip: 12
Resistivity of substrate: 1-10 Ω·cm
Metallization: Chromium/Gold-Palladium 2/50 nm
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일반 설명
The graphene FET-S20 chip is designed for measurements in liquid medium. This chip provides 12 graphene devices, with encapsulation on the metal pads to avoid degradation and reduce leakage currents, and the probe pads located near the periphery of the chip. It also includes a non-encapsulated electrode at the center of the chip, which allows liquid gating without the need of an external gate electrode.
애플리케이션
- Bioelectronics
- FET based sensor research for active materials deposited on graphene
- Clinical applications
- Biosensors
특징 및 장점
- State-of-the-art GFETs utilizing consistently high-quality CVD monolayer graphene
- Metallic contacts and metal/graphene interface are encapsulated to avoid degradation and reduce leakage current in liquid environment
- Perfect platform device for new sensor research and development
- 12 individual GFETs per chip
- A central gate electrode
Storage Class Code
11 - Combustible Solids
WGK
nwg
Flash Point (°F)
Not applicable
Flash Point (°C)
Not applicable
가장 최신 버전 중 하나를 선택하세요:
문서
Synthesis and Applications of Graphene Nanoribbons Synthesized
자사의 과학자팀은 생명 과학, 재료 과학, 화학 합성, 크로마토그래피, 분석 및 기타 많은 영역을 포함한 모든 과학 분야에 경험이 있습니다..
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