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Merck
모든 사진(3)

주요 문서

203815

Sigma-Aldrich

Molybdenum(VI) oxide

99.97% trace metals basis

동의어(들):

Molybdenum trioxide

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About This Item

Linear Formula:
MoO3
CAS Number:
Molecular Weight:
143.94
EC Number:
MDL number:
UNSPSC 코드:
12352303
eCl@ss:
38180807
PubChem Substance ID:
NACRES:
NA.23

Quality Level

분석

99.97% trace metals basis

양식

powder

mp

795 °C (lit.)

응용 분야

battery manufacturing

SMILES string

O=[Mo](=O)=O

InChI

1S/Mo.3O

InChI key

JKQOBWVOAYFWKG-UHFFFAOYSA-N

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일반 설명

Molybdenum(VI) oxide, also known as molybdenum trioxide, is a compound of molybdenum and oxygen with the approximate chemical formula of MoO3. Typically, it a white or light yellow powder, although molybdenum(VI) oxide can adopt a high concentration of defects including oxygen vacancies that impart a bluish or greenish color. Molybdenum(VI) oxide has a high melting point of 2,620 °C. Chemically, molybdenum(VI) oxide is a strong oxidizing agent and has a high work function. Consequently, it is used as a catalyst in chemical reactions and as a starting material to produce other molybdenum compounds. In addition, it is added to pigments, glasses, lubricants, and plastics.

애플리케이션

Precursor to LAMOX fast ion conductors and superconductors.
Used in the solid state synthesis of a remarkable ternary, reduced molybdenum oxide, Pr4Mo9O18, whose structure contains previously unknown Mo7, Mo13 and Mo19 clusters. The new cluster product is a small band gap semiconductor.
Used in the solid state synthesis of a remarkable ternary, reduced molybdenum oxide, Pr4Mo9O18, whose structure contains previously unknown Mo7, Mo13and Mo19 clusters. The new cluster product is a small band gap semiconductor.

픽토그램

Health hazardExclamation mark

신호어

Warning

유해 및 위험 성명서

Hazard Classifications

Carc. 2 - Eye Irrit. 2 - STOT SE 3

표적 기관

Respiratory system

Storage Class Code

11 - Combustible Solids

WGK

WGK 1

Flash Point (°F)

Not applicable

Flash Point (°C)

Not applicable

개인 보호 장비

dust mask type N95 (US), Eyeshields, Faceshields, Gloves


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Seiichiro Murase et al.
Advanced materials (Deerfield Beach, Fla.), 24(18), 2459-2462 (2012-04-11)
An MoO(3) film spin-coated from a solution prepared by an extremely facile and cost-effective synthetic method is introduced as an anode buffer layer of bulk-heterojunction polymer photovoltaic devices. The device efficiency using the MoO(3) anode buffer layer is comparable to
Design of transparent anodes for resonant cavity enhanced light harvesting in organic solar cells.
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ACS applied materials & interfaces, 3(9), 3244-3247 (2011-08-13)
We report on a sol-gel-based technique to fabricate MoO(3) thin films as a hole-injection layer for solution-processed or thermally evaporated organic solar cells. The solution-processed MoO(3) (sMoO(3)) films are demonstrated to have equal performance to hole-injection layers composed of either
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The Journal of chemical physics, 134(3), 034706-034706 (2011-01-26)
The electronic structures at the MoO(3)∕Co interface were investigated using synchrotron-based ultraviolet and x-ray photoelectron spectroscopy. It was found that interfacial chemical reactions lead to the reduction of Mo oxidation states and the formation of Co-O bonds. These interfacial chemical

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